| 发明名称 |
Isolation structure with nitrogen-containing liner and methods of manufacture |
| 摘要 |
A semiconductor isolation trench includes a substrate and a trench formed therein. The trench is lined with a nitrogen-containing liner and filled with a dielectric material. The nitrogen-containing liner preferably contacts the active region of a device, such as a transistor, located adjacent to the trench.
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| 申请公布号 |
US2005035426(A1) |
申请公布日期 |
2005.02.17 |
| 申请号 |
US20030687377 |
申请日期 |
2003.10.16 |
| 申请人 |
KO CHIH-HSIN;YEO YEE-CHIA;GE CHUNG-HU;LEE WEN-CHIN |
发明人 |
KO CHIH-HSIN;YEO YEE-CHIA;GE CHUNG-HU;LEE WEN-CHIN |
| 分类号 |
H01L21/28;H01L21/306;H01L21/76;H01L21/762;H01L21/8234;H01L29/78;(IPC1-7):H01L29/00;H01L21/823 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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