| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a diamond film, which is almost free from a problem of danger in the handling time, such as an adverse influence to a human body or an explosion, in a doping process, and by which a low electric resistivity diamond film can be manufactured easily and uniformly at a low cost with good reproducibility. <P>SOLUTION: In the method for manufacturing the diamond film on a base material by a vapor phase reaction at least by introducing a raw material gas, PO(OCH<SB>3</SB>)<SB>3</SB>gas is incorporated into the raw material gas as a doping source of phosphorous and the diamond film doped with phosphorous is deposited on the base material by the vapor phase reaction utilizing the mixed raw material gas. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
