| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor (Tr) module that has a simple structure and is suited to a gradient magnetic-field amplifier indicating an especially steep magnetic-field gradient characteristic by low leakage inductance. SOLUTION: The Tr module has a first Tr and a first free wheel diode (FD) as well as a second Tr and a second FD. A first Tr chip (2) having the first Tr and a second D chip (5) having the second FD are arranged on a positive potential surface (8), and the first and second D chips are connected to an output potential surface (12). A second Tr chip (4) having the second Tr and a first D chip (3) having the first FD are arranged onto the output potential surface, at least two sides of the output potential surface are put adjacent to a negative potential surface (7), and the second Tr chip and the first D chip are connected to the negative potential surface through conductors (10, 11). On a circuit board (6), each Tr chip is arranged adjacent to a D chip arranged on the same potential plane, and is arranged opposite to a D chip having an FD that is not on the plane and attached to the Tr chip. COPYRIGHT: (C)2005,JPO&NCIPI |
