PIN FET AND ITS FORMING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a pin FET and its forming method. SOLUTION: This transistor is arranged on a supporting substrate and is equipped with a pin pattern including a multiplayer pattern composed of at least multiple primary semiconductors and secondary semiconductor patterns which are laminated alternatively. A gate electrode that crosses the upper part of the pin pattern is arranged, and a gate insulating film is placed between the pin pattern and the gate electrode. A pair of impurity diffusion layers is formed on both sides of the gate electrode inside the pin pattern. The primary and secondary semiconductor patterns have a wider lattice width at least in one direction than the silicon lattice width. Due to the foregoing, in the channel region formed inside the pin pattern, the pin FET performance can be improved as the mobility of electric charge increases. COPYRIGHT: (C)2005,JPO&NCIPI