发明名称 |
MANUFACTURING METHOD OF PHOTODETECTOR |
摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a photodetector which realizes rapid response. SOLUTION: The manufacturing method of the photodetector has a trench groove formation process as shown in the figure (a) for forming a trench groove 20 extending from the surface of an n<SP>-</SP>-type layer 14 to an n<SP>+</SP>-type buried layer 13 around a region A1 provided with a photo detection surface S1 of a photodiode, and a connection layer formation process as shown in the figure (b) for forming an n<SP>+</SP>-type connection layer 21 extending from the surface of the n<SP>-</SP>-type layer 14 to the n<SP>+</SP>-type buried layer 13 along a side wall 20a by diffusing n-type impurities from the side wall 20a of the trench groove 20 to the n<SP>-</SP>-type layer 14. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2005045125(A) |
申请公布日期 |
2005.02.17 |
申请号 |
JP20030279333 |
申请日期 |
2003.07.24 |
申请人 |
HAMAMATSU PHOTONICS KK |
发明人 |
FUJII YOSHIMAROU;OKAMOTO KOJI;SAKAMOTO AKIRA |
分类号 |
H01L27/146;H01L31/10;(IPC1-7):H01L31/10 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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