| 发明名称 |
Verfahren zur Kristallzüchtung |
| 摘要 |
A crystal growth vessel 2 for growing a crystal within a main container has a crystal growth starting portion 6 in which the crystal starts to grow, whereas the crystal growth starting portion 6 is formed from a material having a thermal conductivity higher than that of a material of the main container 4. <IMAGE> |
| 申请公布号 |
DE60017324(D1) |
申请公布日期 |
2005.02.17 |
| 申请号 |
DE2000617324 |
申请日期 |
2000.08.01 |
| 申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
HAGI, YOSHIAKI;KATO, SHIGETO |
| 分类号 |
C30B9/00;C30B11/00;C30B11/14;C30B29/40;C30B29/42;F27D1/00 |
主分类号 |
C30B9/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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