| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for selecting a substrate for a photomask blank resulting in a photomask with which a refined pattern can be drawn on a wafer substrate by exposure with high accuracy. <P>SOLUTION: In the case of forming one or more layers of films including at least a light shielding film or a phase shift film on the substrate for the photomask blank to prepare the photomask blank, patterning the films to prepare the photomask, and fixing the photomask to an aligner, changes in the upper face profile of the substrate is simulated from the time before forming a film to the time of fixing the substrate to the aligner. Then the upper face profile of the substrate before change which results in a flat upper face when the substrate is fixed to the aligner is determined, and a substrate for a photomask blank having the determined upper face profile is selected. By this method, the substrate for a photomask blank having the optimized upper face profile of the substrate can be manufactured. Since substrates which fails to obtain specified pattern accuracy because of defective profiles on the pattern forming face for a photomask can be decreased as much as possible in the manufacturing processes of the substrate, the productivity of the photomask can be improved. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
