发明名称 |
REACTIVE SPUTTERING DEPOSITION DEVICE AND METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a reactive sputtering deposition device provided with a partition plate between a sputtering target and a substrate. SOLUTION: In the reactive sputtering deposition device, the partition plate is provided between the target and the substrate, a vapor deposition chamber is divided into a substrate-side reaction chamber and a target-side sputtering chamber and a hole enabling a metallic substance separated from the target to reach the substrate is formed at the central part of the partition plate. Thus, a metal oxide thin film can be deposited at high speed on the substrate since the oxidation of the metallic target is prevented by minimizing the movement of a reactive gas to the metallic target. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2005042200(A) |
申请公布日期 |
2005.02.17 |
申请号 |
JP20040212985 |
申请日期 |
2004.07.21 |
申请人 |
KOREA ELECTROTECHNOLOGY RESEARCH INST |
发明人 |
PARK CHAN;YOUM DO-JUN;KIM HO-SUP;CHUNG KOOK-CHAE;LEE BYUNG-SU;LIM SUN-ME |
分类号 |
C23C14/34;C23C14/00;C23C14/08;C23C14/32;(IPC1-7):C23C14/34 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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