发明名称 METHOD AND DEVICE FOR CONTROLLING FILM THICKNESS
摘要 PROBLEM TO BE SOLVED: To provide a method for controlling a film thickness, which reproducibly forms a thin film having a predetermined film thickness with high accuracy by using an RF sputtering method, and to provide a device for controlling the film thickness. SOLUTION: When carrying out a step of forming the thin film on an article through RF sputtering in a vacuum chamber 3, and a step of removing the formed thin film in the same chamber by dry etching, the film thickness controlling method comprises monitoring the thickness of the formed thin film, and controlling either an RF sputtering condition for forming the film or a dry etching condition for removing the formed thin film, to make the film into a predetermined thickness. The etching or film-forming step adjusts the difference between the film thicknesses to control the film into the predetermined thickness. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005042160(A) 申请公布日期 2005.02.17
申请号 JP20030277399 申请日期 2003.07.22
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KONDO KEIICHI;SHIMAMURA TETSUO;KOYO TAKAAKI
分类号 C23C14/54;C23C14/34;(IPC1-7):C23C14/54 主分类号 C23C14/54
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