发明名称 Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit
摘要 A semiconductor chip includes a semiconductor substrate 126, in which first and second active regions are disposed. A resistor 124 is formed in the first active region and the resistor 124 includes a doped region 128 formed between two terminals 136. A strained channel transistor 132 is formed in the second active region. The transistor includes a first and second stressor 141, formed in the substrate oppositely adjacent a strained channel region 143.
申请公布号 US2005035409(A1) 申请公布日期 2005.02.17
申请号 US20030729095 申请日期 2003.12.05
申请人 KO CHIH-HSIN;LEE WEN-CHIN;YEO YEE-CHIA;LIN CHUN-CHIEH;HU CHENMING 发明人 KO CHIH-HSIN;LEE WEN-CHIN;YEO YEE-CHIA;LIN CHUN-CHIEH;HU CHENMING
分类号 H01L21/336;H01L21/8238;H01L27/01;H01L29/78;(IPC1-7):H01L27/01 主分类号 H01L21/336
代理机构 代理人
主权项
地址