发明名称 |
Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit |
摘要 |
A semiconductor chip includes a semiconductor substrate 126, in which first and second active regions are disposed. A resistor 124 is formed in the first active region and the resistor 124 includes a doped region 128 formed between two terminals 136. A strained channel transistor 132 is formed in the second active region. The transistor includes a first and second stressor 141, formed in the substrate oppositely adjacent a strained channel region 143.
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申请公布号 |
US2005035409(A1) |
申请公布日期 |
2005.02.17 |
申请号 |
US20030729095 |
申请日期 |
2003.12.05 |
申请人 |
KO CHIH-HSIN;LEE WEN-CHIN;YEO YEE-CHIA;LIN CHUN-CHIEH;HU CHENMING |
发明人 |
KO CHIH-HSIN;LEE WEN-CHIN;YEO YEE-CHIA;LIN CHUN-CHIEH;HU CHENMING |
分类号 |
H01L21/336;H01L21/8238;H01L27/01;H01L29/78;(IPC1-7):H01L27/01 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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