| 摘要 |
PROBLEM TO BE SOLVED: To provide equipment which can surely remove a thin film formed in an end part of a surface of a wafer and prevent etching unevenness. SOLUTION: After a first etching by supplying etchant to a rear surface of a wafer W which rotates in the state that the end part of the wafer W is held by a first pin 33a, holding of the end part of the wafer W is switched from the first pin 33a to a second pin 33b by a switch mechanism 40. Furthermore, a second etching process is performed by supplying etchant to the rear surface of the wafer W which rotates in the state that the end part of the wafer W is held by the second pin 33b. Thereby, a part which is not etched in the end part of the surface of the wafer W at the time that the first etching process is finished can be eliminated. Therefore, a thin film F formed in the end part of the surface of the wafer W can be surely removed, and generation of etching unevenness can be prevented. COPYRIGHT: (C)2005,JPO&NCIPI |
