| 摘要 |
PROBLEM TO BE SOLVED: To realize an anti-fuse structure using an insulation film that is a diffusion prevention film of copper wires. SOLUTION: A semiconductor device comprises a first wire 4 made of a first metal formed on a semiconductor substrate 1, a second insulation film 5 formed on the first wire 4, and a second wire 8 made of a second metal formed on the second insulation film 8. The second insulation film 5 has barrier properties for preventing the diffusion of the first metal. COPYRIGHT: (C)2005,JPO&NCIPI |
