| 摘要 |
A vertical power semiconductor component, e.g. a diode or an IGBT, in which there are formed, on the rear side (R) of a substrate (S), a rear side emitter (14, 14a) or a cathode emitter (24) and, over that, a rear side metal layer (15; 25) that at least partly covers the latter, is defined by the fact that, in the edge region (11; 21) of the component (1-4), provision is made of injection attenuation means (18; 28; 14a; 15a) for reducing the charge carrier injection from the rear side emitter (14, 14a) or the cathode emitter (24) into said edge section (11; 21).
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