ELECTRONIC BEAM EXPOSURE DEVICE AND EXPOSURE METHOD

摘要

A mask of identical magnification and a wafer are arranged in a perpendicular way. Thus, the pattern section of the mask of identical magnification will not bend and there is no need of strongly pulling the pattern section even in a mask having no beam. Moreover, the it has become possible to further reduce the gap between the mask and the wafer. Since there is no need of strongly pulling the pattern section of the stencil mask, it is possible to attach a very thin membrane to the pattern section. Thus, even when the acceleration voltage of the electronic beam is as low as several kV, it is possible to use a mask called a membrane mask and perform pattern formation by one exposure even in a pattern of doughnut shape.