| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To efficiently perform a program operation of a nonvolatile memory without being affected by a manufacturing parameter while suppressing a variance in threshold voltages. <P>SOLUTION: The constant current of a fixed size is supplied from a constant current bias circuit 10 to the selected columns BL1, BL2 of a memory cell array 1 during a program operation. By a constant current channel current, channel hot electrons are always generated and injected into a floating gate. Thus, electron injection efficiency is improved to efficiently perform the program of a memory cell. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
