发明名称 Plasmon assisted enhancement of organic optoelectronic devices
摘要 Optoelectronic devices and methods for their fabrication having enhanced and controllable rates of the radiative relaxation of triplet light emitters are provided exemplified by organic light emitting devices based on phosphorescent materials with enhanced emission properties. Acceleration of the radiative processes is achieved by the interaction of the light emitting species with surface plasmon resonances in the vicinity of metal surfaces. Non-radiative Förster-type processes are efficiently suppressed by introducing a transparent dielectric or molecular layer between the metal surface and the chromophore. For materials with low emission oscillator strengths (such as triplet emitters), the optimal separation distance from the metal surface is determined, thus suppressing energy transfer and achieving a significant acceleration of the emission rate.
申请公布号 US2005035346(A1) 申请公布日期 2005.02.17
申请号 US20030639867 申请日期 2003.08.13
申请人 BAZAN GUILLERMO C.;OSTROWSKI JACEK;MIKHAILOVSKY ALEXANDER;KATIYAR MONICA 发明人 BAZAN GUILLERMO C.;OSTROWSKI JACEK;MIKHAILOVSKY ALEXANDER;KATIYAR MONICA
分类号 H01L35/24;H01L51/50;H01L51/52;(IPC1-7):H01L35/24 主分类号 H01L35/24
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