发明名称 Defect controlled nanotube sensor and method of production
摘要 Sensor for detecting a physical or chemical quantity, comprising a defect controlled nanotube. The sensor can be produced by post treating a nanotube with sufficient energy to modify at least one of density and type of defects in the nanotube, and associating the nanotube with a circuit capable of providing an output signal based upon change of electrical characteristic of the nanotube in response to stimulus of the nanotube.
申请公布号 US2005036905(A1) 申请公布日期 2005.02.17
申请号 US20030638483 申请日期 2003.08.12
申请人 MATSUSHITA ELECTRIC WORKS, LTD. 发明人 GOKTURK HALIT SUHA
分类号 G01L1/14;C01B31/02;G01B7/16;G01D21/02;G01K7/16;G01K7/34;G01L1/22;G01N1/00;G01N27/00;G01N27/04;G01N27/12;G01N27/22;G01N27/414;(IPC1-7):G01N1/00 主分类号 G01L1/14
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