| 摘要 |
PROBLEM TO BE SOLVED: To provide a forming method and a device for a ferro-electric film. SOLUTION: Thin film depositing method and device offer at least one precursor gas to a processor chamber, a gas, separately from the above-mentioned at least one precursor gas, to the above-mentioned processor chamber, and form compound film on a wafer from the above-mentioned at least one precursor gas and the above-mentioned gas in the above-mentioned processor chamber. The depositing method can be CVD (chemical vapor deposition), MOCVD (organic metal chemical vapor deposition), ALD (atomic layer deposition), or those similar to this. The above-mentioned compound film can be oxide, nitride, carbide, or those similar to this. COPYRIGHT: (C)2005,JPO&NCIPI
|
