METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method by which a semiconductor device having excellent electrical characteristics can be manufactured by using a High-k film having good characteristics and combining the characteristics of the film with a realizable etching technique. SOLUTION: The method of manufacturing the semiconductor device includes a step of forming an insulating film, either an LaAlOxfilm or PrAlOxfilm, on a silicon substrate, a step of forming a gate electrode on the insulating film, and a step of wet-etching the insulating film by using a liquid chemical of 9-10 in pH. The liquid chemical can contain fluorine and amine. COPYRIGHT: (C)2005,JPO&NCIPI