发明名称 METHOD FOR PROBE TEST, PROBE DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method for probe test wherein the contact accuracy of a probe pin is improved by suppressing backlash, and to provide a prove device and a method of manufacturing a semiconductor device. SOLUTION: The method for probe test is a method of conducting a probe test by bringing probe pins into contact with IC chips on a semiconductor wafer W, one or several IC chips at a time. In this method, a probing direction of conducting the probe test is unified in one direction. By unifying the probing direction in one direction, traces 24a-24d of the probe pins never deviate to the right or to the left from the center of electrode pads 22a-22d, resulting in leaving stable pin traces. That is, the pin traces can be prevented from going in zigzags by chips in odd-numbered lines and even-numbered lines. Consequently, the contact accuracy of the probe pins can be improved. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005044935(A) 申请公布日期 2005.02.17
申请号 JP20030201891 申请日期 2003.07.25
申请人 SEIKO EPSON CORP 发明人 FUKUDA ERI
分类号 G01R1/06;H01L21/66;(IPC1-7):H01L21/66 主分类号 G01R1/06
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