| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory device capable of realizing an improvement of yield, the extension of service life, and an increase of the degree of freedom of a data processing or the like. SOLUTION: A ferrodielectric memory 2 comprises one ferrodielectric capacitor, input data DIN is stored in the capacitor. A comparator 3 performs binarization of the input data DIN or read-out data from the ferrodielectric memory 2. A clocked inverter 4 reverses an input from the comparator 3 at the time of its operation and outputs it. A latch circuit 5 latches output data of the clocked inverter 4. In MOS transistors M1, M2 included in the ferroelectric memory 2 and MOS transistors M3-M6 constituting the clocked inverter 4, the prescribed ON-OFF operation is controlled by a control circuit. COPYRIGHT: (C)2005,JPO&NCIPI
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