发明名称 |
Method of controlling a capacitance of a thin film transistor liquid crystal display (TFT-LCD) storage capacitor |
摘要 |
A method of controlling the capacitance of a thin film transistor liquid crystal display (TFT-LCD) storage capacitor is disclosed. In certain embodiments, the method includes i) forming an undoped amorphous silicon layer on a silicon nitride layer, ii) forming an etching mask on the undoped amorphous silicon layer, and iii) forming two doped amorphous silicon layers on portion of the undoped amorphous silicon layer and the etching mask, the two doped amorphous silicon layers being spaced apart and located on either side of the gate, wherein an etching selectivity ratio of the undpoed and doped amorphous silicon layers over the dielectric layer being not less than about 5.0.
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申请公布号 |
US2005037533(A1) |
申请公布日期 |
2005.02.17 |
申请号 |
US20040934014 |
申请日期 |
2004.09.03 |
申请人 |
PENG CHIH-YU;LIN WEI-CHUAN;HSIAO CHIAN-CHIH;CHUANG TA-KO;CHU CHUN-HUNG;LIN CHIH-LUNG;LIN CHIN-MAO |
发明人 |
PENG CHIH-YU;LIN WEI-CHUAN;HSIAO CHIAN-CHIH;CHUANG TA-KO;CHU CHUN-HUNG;LIN CHIH-LUNG;LIN CHIN-MAO |
分类号 |
G02F1/1362;H01L21/77;H01L21/84;H01L27/12;H01L27/13;H01L29/423;(IPC1-7):H01L21/00 |
主分类号 |
G02F1/1362 |
代理机构 |
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