发明名称 |
Semiconductor device having a random grained polysilicon layer and a method for its manufacture |
摘要 |
A semiconductor device having a random grained polysilicon layer and a method for its manufacture are provided. In one example, the device includes a semiconductor substrate and an insulator layer on the substrate. A first polysilicon layer having a random grained structure is positioned above the insulator layer, a semiconductor alloy layer is positioned above the first polysilicon layer, and a second polysilicon layer is positioned above the semiconductor alloy layer.
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申请公布号 |
US2005037555(A1) |
申请公布日期 |
2005.02.17 |
申请号 |
US20040870878 |
申请日期 |
2004.06.17 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHEN CHIA-LIN;YAO LIANG-GI;CHEN SHIH-CHANG |
分类号 |
H01L21/28;H01L29/49;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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