发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURED THERETHROUGH
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of obtaining accurate dimensions by processes of forming a calibration curve obtained by previously plotting exposure doses and measured dimensions, comparing the average value of the dimensions of the four corners of a reticle shot with the calibration curve, and adjusting an exposure dose on the basis of the above differential. SOLUTION: The method of manufacturing the semiconductor device comprises a measuring process of measuring the dimensional measurement pattern of the four corners of a reticle shot, an averaging process of averaging the dimensional measurements calculated through the measuring process, a calculating process of calculating exposure doses, and a comparison process of comparing the exposure dose calculated through the calculation process with the averaged dimensional measurements averaged through the averaging process. The exposure dose is determined through the comparison process, and then the substrate undergoes an exposure process in the manufacture of the semiconductor device. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005044838(A) 申请公布日期 2005.02.17
申请号 JP20030200104 申请日期 2003.07.22
申请人 RICOH CO LTD 发明人 SAGAWA KOICHI
分类号 G03F7/20;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/20
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