METHOD OF FORMING GRATING ON SUBSTRATE AND III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE USING THE SUBSTRATE

摘要

The present invention relates to a method of manufacturing a substrate for use in a III-nitride semiconductor light emitting device and a III-nitride semiconductor light emitting device using the substrate, provides for a III-nitride semiconductor light emitting device including a substrate on which a light emitting unit having an active layer that generates light through recombination of electrons and holes is epitaxially grown, wherein the substrate comprises at least one grating on the surface on which the light emitting unit is epitaxially grown, and the grating includes a sidewall, and the sidewall includes a step and a method of manufacturing the substrate, thereby can increase the external quantum efficiency of the light emitting device.