| 摘要 |
PROBLEM TO BE SOLVED: To easily manufacture thin film transistors and PIN diodes which are different in characteristic with a small number of processes. SOLUTION: This array substrate has activated layers 11 of thin film transistors 4, 5 on the glass substrate 3 and photoelectric conversion section 21 that are composed of amorphous silicon thin film. In the array substrate, impurities are doped into the activated layers 11 and photoelectric sections 21 in a same process, if necessary, to have different doping concentration. Thus, the thin film transistors 4, 5 with desired characteristics and the PIN diodes 6 with increased photo sensitivity are easily and simultaneously manufactured on the glass substrate 3 with reduced number of processes. COPYRIGHT: (C)2005,JPO&NCIPI |
