| 摘要 |
PROBLEM TO BE SOLVED: To provide an output circuit, small in a parasitic capacity and a parasitic resistance in the drain unit of an output MOS transistor and reinforced in a static electricity resistance capable of effecting high-speed circuit operation. SOLUTION: An electrostatic protective circuit exclusive between an output terminal and a grounding terminal (or a power supply terminal) is provided, and the output circuit connected in parallel to the electrostatic protective circuit is constituted of the cascode connection of the first MOS transistor source drain region formed by a silicide formation, and the second MOS transistor. The gate electrodes of both transistors are connected to an internal circuit, while the source diffusion layer of the first MOS transistor and the drain diffusion layer of the second MOS transistor are formed respectively so as to be separated from each other and are connected by a metal wiring. COPYRIGHT: (C)2005,JPO&NCIPI |
