发明名称 LIFT-OFF METHOD
摘要 PROBLEM TO BE SOLVED: To provide a lift-off method for stably forming a pattern having substantially no burr and an apparatus therefor, in relation to a lift-off method for a semiconductor substrate, on a surface of which an evaporated metal film to be removed is formed via a resist, and a lift-off apparatus for realizing the method. SOLUTION: An ultrasonic peeling-liquid jet nozzle 2, a peeling-liquid shower jet nozzle 3, and a solvent jet nozzle are provided. The evaporated metal film is physically peeled off by the peeling liquid to which ultrasonic power is superposed on its surface, and metal residuals and the resist are removed by jetting the peeling liquid of a raised temperature in a shower. Then, residuals of the resist are removed by jetting a solvent of a raised temperature in order to prevent residual organic coating films. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005045156(A) 申请公布日期 2005.02.17
申请号 JP20030279820 申请日期 2003.07.25
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 YAMAGUCHI TSUNEO
分类号 G03F7/26;H01L21/027;H01L21/306;(IPC1-7):H01L21/306 主分类号 G03F7/26
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