| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which uses a two-dimensional-slab photonic crystal having an active layer capable of being excited through electrodes. SOLUTION: The semiconductor device 10 has a two-dimensional-slab photonic crystal structure, in which a sheet-shaped slab layer 4 is supported by a substrate 5. The sheet-shaped slab layer 4 is formed by sequentially stacking a lower cladding layer 2, an active layer 1, and an upper cladding layer 3. In the slab layer 4, a periodic refractive-index distribution structure is formed, wherein a linear defect region serving as a waveguide 7 is introduced in the stacked planes. In the slab layer 4, a p-type region and an n-type region are formed in such a way that a pn junction plane is formed with a prescribed angle to the stacked layers of the slab layer 4. COPYRIGHT: (C)2005,JPO&NCIPI
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