| 摘要 |
PROBLEM TO BE SOLVED: To stabilize a circuit and increase the operating speed of the circuit by mixedly loading a bulk transistor and an SOI transistor in a semiconductor device without increasing the chip area of the device. SOLUTION: The semiconductor device comprises a semiconductor substrate 17, an insulating film 13 formed on the substrate 17, and a semiconductor film 16 formed on the film 13. The device also comprises a plurality of element separating regions 23 which divide the semiconductor film 16 into a plurality of semiconductor regions and a plurality of transistors 25a, 25b, and 25c formed in the semiconductor regions. The semiconductor film 16 has a thick area in which the thickness of the film 16 is made thicker, and a thin area in which the thickness of the film 16 is made thinner. In the thick area of the semiconductor film 16, the element separating regions 23 and insulating film 13 are not in contact with each other. In the thin area, on the other hand, the element separating regions 23 and insulating film 13 are in contact with each other. COPYRIGHT: (C)2005,JPO&NCIPI
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