发明名称 Synchronous first-in/first-out block memory for a field programmable gate array
摘要 The present invention comprises a field programmable gate array that has a plurality of dedicated first-in/first-out memory logic components. The field programmable gate array includes a plurality of synchronous random access memory blocks that are coupled to a plurality of dedicated first-in/first-out memory logic components and a plurality of random access memory clusters that are programmably coupled to the plurality of dedicated first-in/first-out memory logic components and to the plurality of synchronous random access memory blocks.
申请公布号 US2005036398(A1) 申请公布日期 2005.02.17
申请号 US20040948010 申请日期 2004.09.22
申请人 ACTEL CORPORATION 发明人 ELFTMANN DANIEL;SPEERS THEODORE;KUNDU ARUNANGSHU
分类号 H03K19/177;(IPC1-7):G11C8/02 主分类号 H03K19/177
代理机构 代理人
主权项
地址