发明名称 |
Method for manufacturing and structure of semiconductor device with sinker contact region |
摘要 |
A method for manufacturing a semiconductor device includes forming a buried layer of a semiconductor substrate. An active region is formed adjacent at least a portion of the buried layer. A first isolation structure is formed adjacent at least a portion of the buried layer. A second isolation structure is formed adjacent at least a portion of the active region. A base layer is formed adjacent at least a portion of the active region. A dielectric layer is formed adjacent at least a portion of the base layer, and then at least part of the dielectric layer is removed at an emitter contact location and at a sinker contact location. An emitter structure is formed at the emitter contact location. Forming the emitter structure includes etching the semiconductor device at the sinker contact location to form a sinker contact region. The sinker contact region has a first depth. The method may also include forming a gate structure. Forming the gate structure includes etching the sinker contact region thereby increasing the first depth of the sinker contact region to a second depth.
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申请公布号 |
US2005037588(A1) |
申请公布日期 |
2005.02.17 |
申请号 |
US20040939221 |
申请日期 |
2004.09.10 |
申请人 |
PINTO ANGELO;BABCOCK JEFFREY A.;SCHOBER MICHAEL;BALSTER SCOTT G.;DIRNECKER CHRISTOPH |
发明人 |
PINTO ANGELO;BABCOCK JEFFREY A.;SCHOBER MICHAEL;BALSTER SCOTT G.;DIRNECKER CHRISTOPH |
分类号 |
H01L21/331;H01L29/417;(IPC1-7):H01L27/082;H01L21/822 |
主分类号 |
H01L21/331 |
代理机构 |
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