| 摘要 |
<p>1212,477. Semi-conductor devices. COMPAGNIE GENERALE D'ELECTRICITE. 14 April, 1969 [17 April, 19681, No. 19075/69. Heading H1K. A solid electrcde forming part of a pressure contact in a semi-conductor device is subjected to a pressure greater than that to which it will be exposed in operation and subsequently ground before assembly into the device. Typically the copper electrodes 2, 3 (Fig. 1) are disposed between flat plates and there subjected to the said pressure. The inner surface of each electrode is afterwards ground, electroplated with gold, silver or platinum, lightly reground to provide a good contact surface, and then assembled with the gold-plated silicon thyristor element 1 in the sealed casing which in operation is clamped between finned heat radiators 4, 5.</p> |
