| 摘要 |
PROBLEM TO BE SOLVED: To prevent not only a reflection from a substrate but also the reflection from an atmosphere interface and decrease interference within a resist film, by a method wherein an underlaid reflection preventing film of a specified film thickness and an overlaid antireflection film are together used. SOLUTION: A substrate on which an SiO2 film 11 is adhered is prepared on a silicon substrate 10 having an undercut, and a substrate surface is flattened by a CMP process. Next, an underlaid antireflection film 1 of film thickness <=70 nm is coated. A dissipating coefficient k of the underlaid antireflection film 1 is 0.5 or more, and the film is one of absorbing KrF excimer lights of about 93%. A photoresist 3 is coated on the antireflection film 1. An overlaid antireflection film 2 is coated. The film thickness and refractive index are set on conditions as antireflection. With, the use of a photomask having a chrome pattern, exposure lights are irradiated on the photoresist 3. Here, the KrF excimer lights are used as the exposure lights, and a development process is performed to form a photoresist pattern 3a. |
