| 摘要 |
A method for obtaining reversible resistance switches on a PCMO thin film when integrated with a highly crystallized seed layer includes: depositing by MOCVD, a seed layer of PCMO thin film, in highly crystalline form, having a thickness of between about 50Å to 300Å, depositing a second PCMO thin film layer on the seed layer by spin coating, having a thickness of between about 500Å to 3000Å, to form a combined PCMO layer; increasing the resistance of the combined PCMO film in a semiconductor device by applying a negative electric pulse of between about -4V to -5V, having a pulse width of between about 75 nsec to 1 µsec; and decreasing the resistance of the combined PCMO layer in a semiconductor device by applying a positive electric pulse of between about +2.5V to +4V, having a pulse width greater than 2.0 µsec, |
