High temperature annealing of spin coated Pr(1-x)Ca(x)MnO3 thin film for RRAM application

摘要

A method of forming a PCMO thin film in a RRAM device includes preparing a substrate; depositing a metal barrier layer on the substrate; forming a bottom electrode on the barrier layer; spin-coating a layer of Pr i-x Ca x MnO 3 (PCMO) on the bottom electrode using a PCMO precursor; baking the PCMO thin film in one or more baking steps; annealing the PCMO thin film in a first annealing step after each spin-coating step; repeating the spin-coating step, the baking step and the first annealing step until the PCMO thin film has a desired thickness; annealing the PCMO thin film in a second annealing step, thereby producing a PCMO thin film having a crystalline structure of Pr 1-x Ca x MnO 3 , where 0.2<=X<=0.5; depositing a top electrode; patterning the top electrode; and completing the RRAM device.