发明名称 THIN FILM SENSOR ARRAY FOR THE DETECTION OF GASES AND METHOD OF MAKING
摘要 <p>The present invention provides a hydrogen sensor including a thin film sensor element formed by metal organic chemical vapor deposition (MOCVD) or physical vapor deposition (PVD), on a micro-hotplate structure. The thin film sensor element includes a film of a hydrogen-interactive metal film that reversibly interacts with hydrogen to provide a correspondingly altered response characteristic, such as optical transmissivity, electrical conductance, electrical resistance, electrical capacitance, magneto resistance, photoconductivity, etc., relative to the response characteristic of the film in the absence of hydrogen. The hydrogen-interactive metal film may be overcoated with a thin film hydrogen-permeable barrier layer to protect the hydrogen-interactive film from deleterious interaction with non-hydrogen species. The hydrogen permeable barrier may comprise species to scavenge oxygen and other like species. The hydrogen sensor of the invention may be usefully employed for the detection of hydrogen in an environment susceptible to the incursion or generation of hydrogen and may be conveniently configured as a hand-held apparatus.</p>
申请公布号 EP1384059(A4) 申请公布日期 2005.02.16
申请号 EP20020731257 申请日期 2002.04.05
申请人 ADVANCED TECHNOLOGY MATERIALS, INC. 发明人 DIMEO, FRANK, JR.;BAUM, THOMAS, H.
分类号 G01N27/12;G01N21/59;G01N21/75;G01N21/78;G01N27/04;G01N27/22;G01N33/00;(IPC1-7):G01N7/00 主分类号 G01N27/12
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