发明名称 |
Method for fabricating a bipolar transistor |
摘要 |
A method for producing bipolar transistors with the aid of selective epitaxy for producing a collector and base. The method includes widening the area of the base either by the isotropic etching of the conductive layer or by the oxidation of the conductive layer and by the subsequent removal of the oxide layer. This widening of the area of the base prevents the occurrence of short-circuits between the emitter and the collector during the subsequent production of the base.
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申请公布号 |
US6855612(B2) |
申请公布日期 |
2005.02.15 |
申请号 |
US20030275423 |
申请日期 |
2003.03.20 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
MUELLER KARL-HEINZ;WOLF KONRAD |
分类号 |
H01L21/331;(IPC1-7):H01L21/331 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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