发明名称 |
Method for forming a box shaped polygate |
摘要 |
A method for forming an improved etching hardmask oxide layer in a polysilicon etching process including providing a planarized semiconductor wafer process surface including adjacent first exposed polysilicon portions and exposed oxide portions; selectively etching through a thickness portion of the exposed oxide portions; thermally growing an oxide hardmask layer over the exposed polysilicon portions to form oxide hardmask portions; exposing second exposed polysilicon portions adjacent at least one oxide hardmask portion; and, etching through a thickness portion of the second exposed polysilicon portions.
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申请公布号 |
US6855602(B2) |
申请公布日期 |
2005.02.15 |
申请号 |
US20030401941 |
申请日期 |
2003.03.27 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHANG YI-SHING;TU YEUR-LUEN;TSAI CHIA-SHIUNG;CHU WEN-TING |
分类号 |
H01L21/8247;H01L27/115;H01L29/423;(IPC1-7):H01L29/62 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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