发明名称 |
Semiconductor thin film and semiconductor device |
摘要 |
To provide a semiconductor device having a function equivalent to that of IGFET, an activation layer is formed by a crystal silicon film crystallized by using a catalyst element helping promote crystallization and a heating treatment is carried out in an atmosphere including a halogen element by which the catalyst element is removed, the activation layer processed by such steps is constituted by a peculiar crystal structure and according to the crystal structure, a rate of incommensurate bonds in respect of all of bonds at grain boundaries is 5% or less (preferably, 3% or less).
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申请公布号 |
US6855956(B2) |
申请公布日期 |
2005.02.15 |
申请号 |
US20030642575 |
申请日期 |
2003.08.19 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;OHTANI HISASHI |
分类号 |
H01L21/312;G02F1/1362;H01L21/20;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/04;H01L29/786;(IPC1-7):H01L29/04 |
主分类号 |
H01L21/312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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