发明名称 |
Nitride based semiconductor photo-luminescent device |
摘要 |
A nitride based semiconductor photo-luminescent device has an active layer having a quantum well structure. The active layer has both a high dislocation density region and a low dislocation density region that is lower in dislocation density than the high dislocation density region, wherein the low dislocation density region includes a current injection region into which a current is injected, and the active layer is less than 1x10<18 >cm<-3 >in impurity concentration.
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申请公布号 |
US6855959(B2) |
申请公布日期 |
2005.02.15 |
申请号 |
US20010816754 |
申请日期 |
2001.03.26 |
申请人 |
NEC CORPORATION |
发明人 |
YAMAGUCHI ATSUSHI;KURAMOTO MASARU;NIDO MASAAKI |
分类号 |
H01S5/343;H01L33/00;H01L33/32;H01S5/183;H01S5/323;(IPC1-7):H01L33/00 |
主分类号 |
H01S5/343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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