发明名称 |
Semiconductor devices and methods for fabricating the same |
摘要 |
Disclosed are semiconductor devices and methods for fabricating the same. According to one embodiment, the method includes sequentially forming a gate insulation layer and a conductive layer on a semiconductor substrate. A buried impurity region is then formed in the semiconductor substrate. Thus, the gate insulation layer is formed before forming the buried impurity region, thereby substantially reducing impurity diffusion that can be caused by a thermal process for forming the gate insulation layer. In addition, the gate insulation layer is not exposed, thus protecting the gate insulation layer from being recessed.
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申请公布号 |
US6855993(B2) |
申请公布日期 |
2005.02.15 |
申请号 |
US20030350733 |
申请日期 |
2003.01.23 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG MIN-KYU;RYU WON-HYUNG |
分类号 |
H01L21/265;H01L21/8234;H01L21/8246;H01L27/112;(IPC1-7):H01L31/119 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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