发明名称 Fabrication method of an electrostatic discharge protection circuit with a low resistant current path
摘要 A fabrication method of an electrostatic discharge protection circuit is described, in which a buried layer is formed in the substrate of the electrostatic discharge protection circuit, and a sinker layer electrically connected to the buried layer and a drain is also formed therein. Thereby, when the electrostatic discharge protection circuit is activated, the current flows from a source through the buried layer and the sinker layer to the drain. The current flow path is remote from the gate dielectric layer to avoid damaging the gate dielectric by a large current, so as to improve the dielectric strength of the electrostatic discharge protection circuit.
申请公布号 US6855611(B2) 申请公布日期 2005.02.15
申请号 US20020259947 申请日期 2002.09.30
申请人 UNITED MICROELECTRONICS CORP. 发明人 CHEN SHIAO-SHIEN;HSU TSUN-LAI;TANG TIEN-HAO;TSENG HUA-CHOU
分类号 H01L21/331;H01L21/8238;H01L21/8249;H01L23/60;H01L23/62;H01L27/02;H01L27/06;H01L27/092;(IPC1-7):H01L21/331 主分类号 H01L21/331
代理机构 代理人
主权项
地址