发明名称 |
Fabrication method of an electrostatic discharge protection circuit with a low resistant current path |
摘要 |
A fabrication method of an electrostatic discharge protection circuit is described, in which a buried layer is formed in the substrate of the electrostatic discharge protection circuit, and a sinker layer electrically connected to the buried layer and a drain is also formed therein. Thereby, when the electrostatic discharge protection circuit is activated, the current flows from a source through the buried layer and the sinker layer to the drain. The current flow path is remote from the gate dielectric layer to avoid damaging the gate dielectric by a large current, so as to improve the dielectric strength of the electrostatic discharge protection circuit.
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申请公布号 |
US6855611(B2) |
申请公布日期 |
2005.02.15 |
申请号 |
US20020259947 |
申请日期 |
2002.09.30 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
CHEN SHIAO-SHIEN;HSU TSUN-LAI;TANG TIEN-HAO;TSENG HUA-CHOU |
分类号 |
H01L21/331;H01L21/8238;H01L21/8249;H01L23/60;H01L23/62;H01L27/02;H01L27/06;H01L27/092;(IPC1-7):H01L21/331 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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