发明名称 Ring resonator based narrow-linewidth semiconductor lasers
摘要 The present invention is a method and apparatus for using ring resonators to produce narrow linewidth hybrid semiconductor lasers. According to one embodiment of the present invention, the narrow linewidths are produced by combining the semiconductor gain chip with a narrow pass band external feedback element. The semi conductor laser is produced using a ring resonator which, combined with a Bragg grating, acts as the external feedback element. According to another embodiment of the present invention, the proposed integrated optics ring resonator is based on plasma enhanced chemical vapor deposition (PECVD) SiO2/SiON/SiO2 waveguide technology.
申请公布号 US6856641(B2) 申请公布日期 2005.02.15
申请号 US20020057427 申请日期 2002.01.25
申请人 CALIFORNIA INSTITUTE OF TECHNOLOGY 发明人 KSENDZOV ALEXANDER
分类号 H01S5/10;H01S5/125;(IPC1-7):H01S3/08 主分类号 H01S5/10
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