Reference voltage generator for ferroelectric memory

摘要

Apparatus and methods are provided for providing reference voltages during read operations in ferroelectric memories, in which a bitline of a reference array substantially similar or identical to a portion of a ferroelectric data array is precharged and then coupled with a bitline in the data array to provide a reference voltage according to a ratio of a number of reference memory cells along the coupled reference bitline to the number of reference memory cells along the coupled reference bitline plus a number of data memory cells along the coupled data bitline.