发明名称 |
Low resistance and reliable copper interconnects by variable doping |
摘要 |
A method and system is provided for efficiently varying the composition of the metal interconnects for a semiconductor device. A metal interconnect according to the present disclosure has an intermediate layer on a dielectric material, the intermediate layer having a relatively higher concentration of an impurity metal along with a primary metal, the impurity metal having a lower reduction potential than the primary metal. The metal interconnect has a main layer of the metal alloy interconnect on top of the intermediate layer and surrounded by the intermediate layer, the main layer having a relatively higher concentration of the primary metal than the intermediate layer, wherein the intermediate and main layers of the metal alloy interconnect each maintains a material uniformity.
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申请公布号 |
US2005029659(A1) |
申请公布日期 |
2005.02.10 |
申请号 |
US20030637105 |
申请日期 |
2003.08.08 |
申请人 |
KO TING-CHU;TSAI MING-HSING;SHIH CHIEN-HSUEH |
发明人 |
KO TING-CHU;TSAI MING-HSING;SHIH CHIEN-HSUEH |
分类号 |
H01L23/532;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L23/532 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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