发明名称 |
Ballasting MOSFETs using staggered and segmented diffusion regions |
摘要 |
An ESD protection circuit includes a field effect transistor device configured such that current flowing through a hot spot filament formed in a gate region must flow in a non-linear path from a drain contact to a source contact. Source diffusion areas are segmented and staggered relative to drain diffusion areas in order to provide the non-linear current path.
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申请公布号 |
US2005029597(A1) |
申请公布日期 |
2005.02.10 |
申请号 |
US20030637324 |
申请日期 |
2003.08.08 |
申请人 |
CONEXANT SYSTEMS, INC. |
发明人 |
WORLEY EUGENE R. |
分类号 |
H01L27/02;H01L29/06;H01L29/08;H01L29/76;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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