发明名称 |
Semiconductor device having superlattice semiconductor layer and method of manufacturing the same |
摘要 |
Provided are a semiconductor device having a superlattice semiconductor layer and a method of fabricating the same. The semiconductor device includes a superlattice semiconductor layer in which first material layers and second material layers formed of different materials are alternately stacked. A plurality holes are formed in the first material layers and the second material layers forming a superlattice structure, and the holes are filled with materials of the adjacent material layers. The provided superlattice structure reduces a driving voltage by transferring charges through the holes in the first material layers and the second material layers while maintaining a predetermined optical confinement characteristic.
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申请公布号 |
US2005029506(A1) |
申请公布日期 |
2005.02.10 |
申请号 |
US20040877982 |
申请日期 |
2004.06.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE WON-SEOK;HA KYOUNG-HO;KWAK JOON-SEOP;PAEK HO-SUN;LEE SUNG-NAM;SAKONG TAN |
分类号 |
H01S5/343;B82Y20/00;H01L29/15;H01L29/20;H01S3/0941;H01S5/22;H01S5/223;H01S5/32;H01S5/323;(IPC1-7):H01L33/00;H01L29/06 |
主分类号 |
H01S5/343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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