发明名称 |
Semiconductor laser device, method for fabricating the same, and optical disk apparatus |
摘要 |
A semiconductor laser device (10) includes a resonant cavity (12) in which a quantum well active layer (11) made up of barrier layers of gallium nitride and well layers of indium gallium nitride is vertically sandwiched between at least light guide layers of n- and p-type aluminum gallium nitride. An end facet reflective film (13) is formed on a reflective end facet (10b) opposite to a light-emitting end facet (10a) in the resonant cavity (12). The end facet reflective film (13) has a structure including a plurality of unit reflective films (130), each of which is made up of a low-refractive-index film (13a) of silicon dioxide and a high-refractive-index film (13b) of niobium oxide. The low-and high-refractive-index films are deposited in this order on the end facet of the resonant cavity (12).
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申请公布号 |
US2005031001(A1) |
申请公布日期 |
2005.02.10 |
申请号 |
US20040943127 |
申请日期 |
2004.09.17 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
SUGAHARA GAKU;KIDOGUCHI ISAO;MIYANAGA RYOKO;SUZUKI MASAKATSU;KUME MASAHIRO;BAN YUSABURO;HIRAYAMA FUKUKAZU |
分类号 |
G11B7/125;H01S5/028;H01S5/20;H01S5/223;H01S5/343;(IPC1-7):H01S5/00;H01S3/08 |
主分类号 |
G11B7/125 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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