| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor having a thin film capacitor where the worsening of the morphology caused by the oxidation of an electrode/dielectric interface, the deterioration of the capacitor characteristics caused by the electrode material and the deterioration of the characteristics of the electrode material per se are prevented. <P>SOLUTION: The semiconductor device is of such the semiconductor device provided with the thin capacitor 3 where a dielectric film 5 comprising a perovskite oxide and an upper electrode 6 are laminated and disposed on a lower electrode 4. At least any of the lower electrode 4 and the upper electrode 6 has a laminated layer of an electrode layer 8 comprising a conductive perovskite oxide disposed so as to contact the laminated layer of conductive perovskite oxides of at least two kinds, for example, the dielectric thin film 5 and an electrode buffer layer 7 comprising the conductive perovskite oxide which is different from the conductive perovskite oxide comprising the electrode layer 8 and is stable at a low oxygen partial pressure. A perovskite oxide with the deficiency of oxygen and constituent element substitution or the like is used for the electrode buffer layer 7. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
